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5G, Emerging Applications Promise Bright Future for GaN/SiC Power Semiconductors

5G, Emerging Applications Promise Bright Future for GaN/SiC Power Semiconductors

 

Built on the foundation of 4G services and emerging applications’ demand for connectivity of lower latency and faster transmission, 5G connectivity technologies are rapidly evolving amid high expectations among vendors around the world. With the 5G standards nearing ratification in 2018, semiconductor companies, network communications equipment makers and other related vendors are getting a better grasp of 5G architecture.

 

Advancements in 5G technologies are bringing both new opportunities and technical challenges for the semiconductor sector. One of them is that while 5G services sometimes use higher frequencies to enable faster transmission and ultra-low latency, such use of higher frequencies cannot increase the power consumption of base stations or mobile devices. Therefore, high-performance power and compound semiconductors like GaN, SiC and GaAs are not only playing a key role in the development process of 5G-related end products, they are also expecting huge growth opportunities as their development will definitely benefit from the launch of 5G services.

 

For example, RF and sour power components are indispensable in mobile devices and base stations. To satisfy the needs for lower power consumption, smaller form factors and better performance, RF power amplifiers based on GaAs, GaN and SiC technologies have started emerging since the dawn of 4G networks. With constant evolution of 5G technologies, GaN is expected to become mainstream in the market for its better power performance.

 

We all know that GaN and GaAs power semiconductors have more advantages than traditional Si-based ones, such as faster switching speed, lower electrical current loss and higher power density. They also far exceed silicon power semiconductors in many other features. The only problem is that its cost is still significantly higher than Si-based devices. But as materials, manufacturing equipment and technology providers have started working together to solve the problem, we are expecting more advancements in the manufacturing process of GaN and GaAs compound semiconductors.

 

In addition to 5G applications, GaN and SiC power semiconductors have drawn attention from photovoltaic inverter and electric car manufacturers. Yole Développement forecasted that driven by emerging applications, the total SiC device market will be worth more than US$1 billion in 2022, with a 40% CAGR from 2020 to 2022. A new survey by Fuji Keizai also showed that the global power semiconductor market may grow to 3.3009 trillion yen by 2020, and next-generation power semiconductors like GaN and SiC are expecting faster growth, with total sales at 166.5 billion yen.

 

How can you miss such a huge and attractive opportunity of great prospects? SEMICON Taiwan 2017 will hold the Power & Compound Semiconductor Forum to help participants get a better insight into the latest advancements of next-generation power devices and their chances with other applications. Key players and research institutes in the areas of power semiconductors and 5G services— including Delta Electronics, Fraunhofer IISB, Wolfspeed, imec, KLA-Tencor, Huawei, Win Semiconductor, Airoha Technology, Veeco and Yole Développement— will analyze the latest developments of GaN, SiC and GaAS power device manufacturing, as well as these advancements’ opportunities in 5G and other applications. It’s a great event not to be missed!

 

Power & Compound Semiconductor Forum

Date & Time:8:30 – 17:05 September 14, 2017

Venue: 4F, 401Room, Taipei Nangang Exhibition Center

Agenda & Registration: www.semicontaiwan.org/zh/node/5226

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