- Ph.D. in Materials Science from University of California-Berkeley
- Responsible for semiconductor strategic technology and integration, technology scouting, and external collaboration.
- Co-authored more than 40 journal and conference publications.
- Co-inventor for more than 25 issued US patents, including several pioneering patents for metal gate work-function tuning and replacement metal gate CMOS Transistor integration.
- First in the world to reveal images of doping atoms in III-V semiconductors.
Dr. Zheng joined Entegris in 2007. He currently serves as the company’s Sr Principal in CTO office and is responsible for semiconductor strategic technology and integration, technology scouting, and external collaboration.
Prior to his current role, he was the technical leader for the development of CVD based phase change materials for high speed storage class memory applications. In this capacity, he led the internal technology team to develop both chemicals and process technologies for phase change materials and collaborated closely with external industry partners, successfully tested advanced phase change materials at device level, leading several important publications and invited talks in the field of CVD based phase change materials and devices.
Before 2007, Dr. Zheng was a Senior Technical Staff at Intel Corporation Component Research. He joined Intel in1994 and was responsible for various technology areas: Gate oxide and dielectrics, replacement metal gate transistor development, and 157nm lithography. Then from 2002 to 2007, he worked at Intel External Program collaborating with universities for advanced topics for Intel exploratory technologies. He was Researcher-in-Residence at MIT from 2000 to 2001 on Optical Interconnect, Visiting Researcher at Stanford University from 2002 to 2004 for III-V Optoelectronic wavelength Conversion Devices, Visiting Fellow at Yale University from 2004 to 2007 for III-V Transistors.
Dr. Jun-Fei Zheng has co-authored more than 40 journal and conference publications. He is co-inventor for more than 25 issued US patents in the area of Transistors, Memory devices, and Optoelectronics, including several pioneering patents for metal gate work-function tuning and replacement metal gate CMOS transistor integration during his work at Intel Component Research.
Dr. Zheng earned a Ph.D. degree in Materials Science from UC-Berkeley in 1994 in the field of III-V semiconductor Interfaces and defects. During his Lawrence Berkeley National Laboratory (LBNL) work, he was the first in the world to reveal images of sub-surface doping atoms in III-V semiconductors by Advanced Scanning Tunneling Microscope that he developed at LBNL.