丁培軍 / Dr. Peijun Ding



丁培軍 / Dr. Peijun Ding


Vice President


PVD Product Division, Beijing NMC


  • Ph.D. Materials Science, University at Albany-RPI, USA



  • Vice President, Beijing NMC Co.,Ltd.

  • Vice President, Sierra Solar Power, Inc. USA

  • KPU Head of Emerging PVD Group, Applied Materials, Inc. USA




Dr. Peijun Ding is currently as the head of the PVD Department as well as the Vice President of NMC Co.,Ltd. He served the Vice President of Thin Film Technology in Sierra Solar Power, Inc, in charging Si film deposition hardware and process development before joined NMC. Prior to that, he worked in Applied Materials, Inc as Senior Process Engineer, Cu Technology Manager, Cu Technology Director, Barrier/Seed KPU Head and finally the KPU Head of Emerging PVD Group.  During his service at Applied, he received the honor of Distinguished Member of Technical Staff twice. He has been devoted to the technical development in the IC field for more than 30 years.

Dr. Ding has published many book chapters, journal articles and patents. Among those, are the innovative work in the following fields: Tantalum-containing barrier layers with copper, copper alloy seed layers for copper metallization in an integrated circuit; Integrated deposition process for copper metallization; Structure and method for improving low temperature copper reflow in semiconductor features; Structure for improving low temperature copper reflow in semiconductor features; Copper alloy seed layer for copper metallization; Overlap design of one-turn coil; Integrated deposition process for copper metallization; Method of sputtering copper to fill trenches and vias, Magnet array in conjunction with rotating magnetron for plasma sputtering; Barrier layer for electroplating processes; Auxiliary magnet array in conjunction with magnetron sputtering; Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement; Metal/metal nitride barrier layer for semiconductor device applications.

Since Dr.Peijun Ding joined NMC, he and his research team have developed a significant number of market-oriented products, including 28nm Hardmask PVD in IC field, TSV PVD, UMB, and RDL PVD in advanced packaging, ITO PVD, AlN PVD in LED field, and Flexer PVD for multiple material sputtering.


Dr. Ding’s fabulous achievement has earned wide recognitions:

  • received multiple awards in Applied Materials including President Award, Best Patent Award,

  • Semiconductor International Editors’ Choice: Best Copper Product 1999 etc.

  • 2009 selected as the first “The Recruitment Program of Global Experts”

  • 2009 selected as the first “The sea poly project of Beijing overseas talents ”

  • 2012 selected as the sixth “Overseas high-level personnel in Beijing economic and Technological Development Zone”

  • 2013 selected as the “Leader of outstanding scientific and technological innovation team of Beijing SASAC”


 Speech Abstract:

 Development of PVD technology for Next Wave IC Packaging Interconnection

In the advanced packaging process, Through Silicon Via (TSV) is one of the critical paths to package multiple chips together, which is mostly used as via-last in middle-end, and more and more as via-first or via-middle in front-end. To achieve the good gapfill, the PVD barrier/seed step coverage is the essential step. There are two critical factors directly impact the step coverage in the PVD process. One is the ionization ratio (the percentage of ions to reach the substrate). The other is the effective bias. To increase the ionization rate, the new magnetron was developed and the ionization rate was improved over 30%. Combined with effective baisable pedestal, we achieved excellent step coverage for upto 12:1 aspect ratio TSV with good asymmetry at wafer edge and resulted in the void-free gapfill. In this presentation, we will give the description of the method for a good gapfill, and the capability to handle different kinds of substrates with upto 10mm warpage. Also our cost-effective solution will be showed in 3D-IC, 2.5D packing applications such as micro-bump, bumping, CIS WLP,and Fan-out applications.


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