For advanced lithography nodes, multi-patterning and pitch doubling/quadrupling are dominant methods to meet the scaling challenges with 193-nm immersion lithography. Additionally, multilayer lithography stacks are needed to manage pattern aspect ratio and etch transfer for the device structures. These techniques have allowed scaling down to the 7-nm node, but at the same time greatly increase the number of process steps and material sets, leading to escalating cost. As process margins for lithography and etch transfer shrink, hyper-tuning of materials and processes is required. At 10-nm and 7-nm nodes, the quadruple pitch can not meet the patterning needs, paving the way for EUV and DSA. With EUV, the potential for cost reduction by eliminating many of the multi-patterning lithography steps is progressing toward manufacturing readiness. As DSA matures, it can provide a lower-cost version of the pitch multiplication for use with both EUV and pitch-multiplied 193i lithography. As a material supplier for 10-nm and 7-nm nodes, reducing defects takes on a whole different level of meaning; oligomers, small molecules, and ionic clusters now may become major defect modes. Extreme levels of purification and fingerprinting of raw materials, in-process intermediates, and the final products is needed to achieve the required defect levels for these new nodes. This presentation will cover the impact of the scaling challenges from the perspective of material provider and critical impact on product development and quality manufacturing for 10-nm and 7-nm materials.