王克中博士

Dr. KC Wang earned his B.S. degree in Physics from National Taiwan University and his Ph.D. degree in Physics from California Institute of Technology. Currently, he serves as the Head of Emerging R&D at Macronix International, leading efforts in developing new memory technologies and exploring innovative system applications.

Prior to joining Macronix in 2015, Dr. Wang held various positions at esteemed organizations, including Rockwell, Conexant, OpNext, HRL, UMC, and ASTRI. With four decades of experience in semiconductor device research, integrated circuit design, and management, he has made significant contributions to the field. Notably, he and his colleagues at Rockwell pioneered in developing Gallium Arsenide HBT technology and successfully transferred it to production. The technology achieved widespread use in microwave power amplifiers for cellular phones. 

From 1975 to 1985, Dr. Wang conducted research in experimental nuclear and neutrino physics at Caltech and UC Irvine.

Dr. Wang is an IEEE Life Fellow. He received several prestigious awards, including Rockwell's Engineer of the Year Award in 1994 and Chairman's Team Award in 1995, and R&D 100 Award in 1996. He has actively participated in multiple technical, advisory, and community-service committees and served as a guest editor for the Journal of Solid-State Circuits. Dr. Wang has co-authored more than 250 journal and conference papers in the fields of physics, electronic devices, circuits, and systems.