Enabling AI systems with atomic-scale precision
Semiconductor innovation has moved from device-level scaling towards systems-to-materials co-optimization, where compute, memory, interconnect, power, thermal performance, and heterogeneous integration must advance together. Meeting these demands requires new materials and processes capable of delivering higher performance, lower power, tighter variability control, and faster integration across advanced logic, high-bandwidth memory, 3D-architectures, chiplets, and advanced packaging, all of which have come together to enable AI applications.
This talk explores how advanced materials delivered with atomic-scale precision are becoming essential enablers of the AI era. Deposition and epitaxy technologies – including ALD, PEALD, CVD, and epitaxy – provide the film quality, conformality, interface control, and structural precision needed for next-generation devices and 3D integration.
Key Technologies Covered
- Advanced materials enabling next-generation logic (e.g., GAA, CFET) and memory (e.g., 4F2 DRAM, HBM, 3D DRAM, etc.)
- Advanced deposition processes like ALD, PEALD, epitaxy, CVD